The main drawbacks of JFETs are that the structure is not compact and the JFET is a low-current-handling device and is thus not suitable for power amplification. Third, the carrier transport in a JFET is made up predominantly of the majority carriers, and thus the switching speed of a JFET is not limited by the minority carrier charge storage such as that in a bipolar junction transistor. Second, the isolated two gate terminals of a JFET allow two different input signals to be applied simultaneously for signal-mixing purposes. As a result, the noise level associated with the current fluctuation due to capture and release of free carriers at the surface effects is very low. JFET or Junction Field Effect Transistor is one of the simplest types of field-effect transistor. First, it has no surface effects, such as interface traps occurring at the oxide-semiconductor interface. The junction field-effect transistor has several key features. Based on Shockley’s theoretical treatment, the first working JFET was reported by Dacey and Ross (1953). Because its conduction process involves predominately one kind of carrier, the JFET is called a unipolar transistor to distinguish it from the bipolar transistor. The junction field-effect transistor (JFET) was first analyzed by Shockley in 1952 (Shockley, 1952).
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